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specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier product features ? 0.7 ? 2.9 ghz ? +39 dbm p1db ? 13 db gain @ 2.6 ghz ? 1.5% evm @ 30 dbm pout ? +12 v supply voltage ? lead-free/green/rohs-compliant 5x6 mm power dfn package applications ? final stage amplifiers for repeaters ? high power amplifiers ? mobile infrastructure ? lte/wcdma/edge/cdma product description the ap561 is a high dynamic range broadband power amplifier in a surface mount package. the single-stage amplifier has 13 db gain, while being able to achieve high performance for 0.7?2.9 ghz a pplications with up to +39 dbm of compressed 1db power. the ap561 uses a high reliab ility +12v ingap/gaas hbt process technology. the device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. the device does not require any negative bias voltage; an internal active bias allows the ap561 to operate directly off a commonly used +12v supply and has the added feature of a +5v power down control pin. rohs-compliant 5x6mm dfn package is surface mountable to allow fo r low manufacturing costs to the end user. functional diagram function pin no. rf in 4,5,6 rf out 9,10,11 i ref 14 v bias 1 nc 2,3,7,8,12,13 specifications parameter units min typ max operational bandwidth ghz 0.7 2.9 test frequency mhz 2600 output channel power dbm +30 power gain db 13.1 input return loss db 13 output return loss db 6.2 error vector magnitude % 1.5 operating current, icc ma 480 collector efficiency % 17.6 rf switching speed ns 50 output p1db dbm 39.0 quiescent current, icq ma 300 reference current, iref ma 10 vpd (4) v +5 vcc v +12 notes: 1. test conditions unless otherwise noted: t = 25oc, vpd = +5v, vcc = +12, icq = 300ma at pout = +30 dbm and f = 2.6 ghz. 2. using an 802.16-2004 ofdma, 64qam-1/2,1024-fft, 20 symbols, 30 subchannels signal, 9.5 db par @ 0.01%. 3. switching speed: 50% ttl to 100/0% rf.vpd used for device power down (low=rf off). 4. vpd relates to iref as shown in table 1 on page 13. 5. capable of handling 10:1 vswr @ 12 v dc , wimax signal, pout avg = 30dbm. absolute maximum rating parameter rating pin max (cw into 50 load) +33 dbm bvcbo 35 v pdiss max 14 w supply voltage 15 v storage temperature -55 to +150 oc max junction temperature, t j for 10 6 hours mttf 158 oc thermal resistance, jc 8.4 c / w operation of this device above any of th ese parameters may cause permanent damage. typical performance parameter units typical test frequency mhz 880 2140 2600 channel power dbm +28 +28 +30 power gain db 15.8 13.8 13.1 input return loss db 15 12 13 output return loss db 10 8.0 6.2 error vector magnitude % 1.5 aclr dbc -52 -50 operating current, icc ma 470 430 480 collector efficiency % 11.2 12 17.6 output p1db dbm 39 37.1 39.0 quiescent current, icq ma 300 reference current, iref ma 10 vpd v +5 vcc v +12 ordering information part no. description AP561-F 0.7-2.9 ghz 12v 8w power amplifier ap561-pcb900 869-894 mhz evaluation board ap561-pcb2140 2110-2170 mhz evaluation board ap561-pcb2500 2.5-2.7 ghz evaluation board standard t/r size = 500 pieces on a 7? reel.
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier application circuit pc board layout circuit board material: 0.0147? rogers ultralam 2000, single layer, 1 oz copper, r = 2.45, microstrip line details: width = .043?, spacing = .050? baseplate configuration notes: 1. please note that for reliable opera tion, the evaluation board will have to be mounted to a much larger heat sink during opera tion and in laboratory environm ents to dissipate the power consumed by the device. the use of a conve ction fan is also recommended in laboratory environments. 2. the area around the module underneath the pcb shoul d not contain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laborat ory, the power-on sequencing is recommended. evaluation board bias procedure following bias procedure is recommended to ensure proper functiona lity of ap561 in a laboratory environment. the sequencing is not required in the final system application. bias. voltage (v) vcc +12 vpd +5 turn-on sequence: 1. attach input and output loads onto the evaluation board. 2. turn on power supply vcc = +12v. 3. turn on power supply vpd = +5v. 4. turn on rf power. turn-off sequence: 1. turn off rf power. 2. turn off power supply vpd = +5v. 3. turn off power supply vcc = +12v.
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier typical device data s-parameters (v cc = +12 v, i cc = 300 ma, 25 c, unmatched 50 ohm system) 0246 frequency (ghz) gain / maximum stable gain -40 -20 0 20 40 gain (db) db(gmax()) ap561 db(|s(2,1)|) ap561 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 6ghz swp min 0.05ghz s(1,1) ap561 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 6ghz swp min 0.05ghz s(2,2) ap561 notes: the gain for the unmatched device in 50 ohm system is shown as th e trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain . the maximum stable gain is shown in the red line. s-parameters (v cc = +12 v, i cq = 300 ma, 25 c, unmatched 50 ohm system, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -0.83 -174.19 27.09 122.75 -43.35 29.12 -1.38 -106.01 100 -0.43 -177.42 22.26 106.35 -43.10 8.71 -1.82 -138.64 300 -0.35 179.26 14.06 89.18 -41.21 1.08 -2.02 -164.78 500 -0.32 177.35 9.81 79.93 -40.63 0.69 -2.10 -172.01 700 -0.34 175.28 7.08 71.64 -40.35 3.54 -2.09 -176.13 900 -0.40 173.11 5.19 63.88 -40.26 -3.79 -1.99 -177.89 1100 -0.47 170.97 3.82 55.72 -40.09 -9.55 -1.86 -178.93 1300 -0.53 168.26 2.80 47.12 -39.83 -16.44 -1.78 -179.77 1500 -0.59 165.56 2.18 37.92 -39.58 -23.59 -1.68 179.34 1700 -0.87 161.87 2.75 25.71 -38.56 -35.47 -1.67 177.40 1900 -1.14 158.99 2.84 12.58 -37.79 -49.59 -1.45 176.17 2100 -1.58 157.33 3.04 -4.10 -37.20 -69.96 -1.07 174.50 2300 -2.07 158.08 3.08 -26.45 -36.71 -98.60 -0.57 171.36 2500 -2.11 161.67 2.27 -53.16 -36.83 -134.34 -0.20 166.20 2700 -1.52 163.86 0.21 -79.14 -37.65 -170.26 -0.18 160.52 2900 -0.93 162.94 -2.57 -100.12 -38.71 157.51 -0.38 155.92 3100 -0.60 161.26 -5.57 -115.90 -39.66 133.27 -0.55 152.79 3300 -0.44 159.75 -8.55 -127.57 -40.18 115.97 -0.68 150.56 3500 -0.30 157.96 -11.15 -136.15 -40.26 102.36 -0.77 148.63 3700 -0.20 156.27 -13.44 -143.55 -40.26 94.11 -0.84 147.06 3900 -0.16 154.67 -15.57 -150.57 -39.83 85.11 -0.87 145.70 4100 -0.14 152.82 -17.53 -157.27 -39.91 78.44 -0.87 144.40 4300 -0.15 150.80 -19.35 -163.61 -39.49 72.37 -0.86 143.38 4500 -0.13 148.32 -21.11 -170.25 -39.09 66.71 -0.89 142.13 device s-parameters are available for download off of the website at: http://www.tqs.com
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 776-787 mhz reference design typical o-fdma performance at 25 c frequency (mhz) 776 780 787 units channel power +28 +28 +28 dbm power gain 16.1 16.2 16.2 db input return loss 11 12 13 db output return loss 11 11 11 db evm 0.68 0.64 0.57 % aclr -51 -51 -52 dbc operating current, icc 405 404 402 ma collector efficiency 13 13 12.9 % output p1db 37.8 37.9 38 dbm quiescent current icq 300 ma reference current iref 10 ma vpd +5 v vcc +12 v notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or damage to d1 will occur. 3. do not exceed 13v on vcc or damage to d2 will occur. 4. components shown on the silkscreen but not on the schematic are not used. 5. the edge of c26 is placed at 35mil from edge of ap561. (1.2 o @ 780 mhz) 6. the edge of l1 is placed 60mil from the edge of c26. (2 o @ 780 mhz) 7. the edge of c27 is placed next to the edge of l1. 8. the edge of c20 is placed 380mil from the edge of c27. (12.9 o @ 780 mhz) 9. the edge of r5 is placed at 115mil from edge of ap561. (3.9 o @ 780 mhz) 10. the edge of c28 is placed 230mil from the edge of r5. (7.8 o @ 780 mhz) 11. the edge of c1 is placed 180mil from the edge of c28. (6.1 o @ 780 mhz) 12. 0 jumpers can be replaced with coppe r trace in target application. 776-787 mhz application circuit performance plots 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels. 9.5 db par @ 0.01%, 5 mhz carrier bw gain vs. frequency t=25c 14 15 16 17 18 0.75 0.77 0.79 0.81 0.83 0.85 frequency (ghz) gain (db) return loss t=25c -20 -15 -10 -5 0 0.75 0.77 0.79 0.81 0.83 0.85 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs output average power vs. frequency t=25c 5 10 15 20 25 24 25 26 27 28 29 30 31 32 output power (dbm) collector efficiency (%) 776 mhz 780 mhz 787 mhz current vs output average power vs. frequency t=25c 300 350 400 450 500 550 600 24 25 26 27 28 29 30 31 32 output power (dbm) collector current (ma) 776 mhz 780 mhz 787 mhz evm vs. output average power vs. frequency t=25c 0 1 2 3 4 5 24 25 26 27 28 29 30 31 32 output power (dbm) evm (%) 776 mhz 780 mhz 787 mhz -60 -55 -50 -45 -40 -35 -30 24 25 26 27 28 29 30 31 32 aclr (dbc) output power (dbm) aclr vs. output average power vs. frequency t=25c 776 mhz 780 mhz 787 mhz w-cdma 3gpp test model 1+64 dpch, no clipping, par = 10.2 db @ 0.01% probability, 3.84 mhz bw
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 869-894 mhz reference design (ap561-pcb900) typical w-cdma performance at 25 c frequency (mhz) 869 880 894 units channel power +28 +28 +28 dbm power gain 15.7 15.8 15.7 db input return loss 14 15 15 db output return loss 9.8 10 11 db aclr -53 -52 -52 dbc operating current, icc 475 470 460 ma collector efficiency 11 11.2 11.4 % output p1db 39.1 39 38.8 dbm quiescent current icq 300 ma reference current iref 10 ma vpd +5 v vcc +12 v notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or damage to d1 will occur. 3. do not exceed 13v on vcc or damage to d2 will occur. 4. components shown on the silkscreen but not on the schematic are not used. 5. the edge of c26 is placed at 40mil from edge of ap561. (1.5 o @ 880 mhz) 6. the edge of l1 is placed 60mil from the edge of c26. (2.3 o @ 880 mhz) 7. the edge of c27 is placed 43 mil from the edge of l1. (1.6 o @ 880 mhz) 8. the edge of c20 is placed 380mil from the edge of c27. (14.6 o @ 880 mhz) 9. the edge of r5 is placed at 105mil from edge of ap561. (4 o @ 880 mhz) 10. the edge of c28 is placed 200mil from the edge of r5. (7.7 o @ 880 mhz) 11. 0 jumpers can be replaced with coppe r trace in target application. 869-894 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, no clipping, par = 10.2 db @ 0.01% probability, 3.84 mhz bw gain vs. frequency t=25c 14 15 16 17 18 0.86 0.87 0.88 0.89 0.90 frequency (ghz) gain (db) return loss t=25c -30 -25 -20 -15 -10 -5 0 0.86 0.87 0.88 0.89 0.90 frequency (ghz) s11, s22 (db) s11 s22 current vs output average power vs. frequency t=25c 300 400 500 600 700 800 24 25 26 27 28 29 30 31 32 output power (dbm) collector current (ma) 869 mhz 880 mhz 894 mhz aclr vs. output average power vs. frequency t=25c -70 -65 -60 -55 -50 -45 -40 24 25 26 27 28 29 30 31 32 output power (dbm) aclr (dbc) 869 mhz 880 mhz 894 mhz 32 33 34 35 36 37 38 39 40 16 17 18 19 20 21 22 23 24 output power (dbm) input power (dbm) output average power vs. input average power t=25c 869 mhz 880 mhz 894 mhz 12 13 14 15 16 17 18 19 20 30 31 32 33 34 35 36 37 38 39 40 gain (db) output power (dbm) gain vs. output average power t=25c 869 mhz 880 mhz 894 mhz
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 6 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 1930-1990 mhz reference design typical w-cdma performance at 25 c frequency (mhz) 1930 1960 1990 units channel power +28 +28 +28 dbm power gain 15.3 15.4 15.3 db input return loss 12 16 18 db output return loss 7.7 7.6 7.5 db aclr -49 -49 -51 dbc operating current, icc 440 430 425 ma collector efficiency 11.7 12 12.3 % output p1db 39.1 38.7 38.2 dbm quiescent current icq 300 ma reference current iref 10 ma vpd +5 v vcc +12 v notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or damage to d1 will occur. 3. do not exceed 13v on vcc or damage to d2 will occur. 4. components shown on the silkscreen but not on the schematic are not used. 5. the edge of c34 is placed at 95mil from edge of ap561. (8.1 o @ 1960 mhz) 6. the edge of c33 is placed 375mil from the edge of c34. (32 o @ 1960 mhz) 7. the edge of c20 is placed 65mil from the edge of c33. (5.6 o @ 1960 mhz) 8. the edge of c31 is placed 60mil from edge of ap561. (5.1 o @ 1960 mhz) 9. the edge of c30 is placed next to the edge of c31 10. the edge of c2 is placed 435mil from the edge of c30. (37.2 o @ 1960 mhz) 11. 0 jumpers can be replaced with coppe r trace in target application. 1930-1990 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, no clipping, par = 10.2 db @ 0.01% probability, 3.84 mhz bw gain vs. frequency t=25c 14 15 16 17 18 1.92 1.94 1.96 1.98 2.00 frequency (ghz) gain (db) return loss t=25c -30 -25 -20 -15 -10 -5 0 1.92 1.94 1.96 1.98 2.00 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs output average power vs. frequency t=25c 5 10 15 20 25 24 25 26 27 28 29 30 31 32 output power (dbm) collector efficiency (%) 1930 mhz 1960 mhz 1990 mhz current vs output average power vs. frequency t=25c 300 400 500 600 700 800 24 25 26 27 28 29 30 31 32 output power (dbm) collector current (ma) 1930 mhz 1960 mhz 1990 mhz aclr vs. output average power vs. frequency t=25c -60 -55 -50 -45 -40 -35 -30 24 25 26 27 28 29 30 31 32 output power (dbm) aclr (dbc) 1930 mhz 1960 mhz 1990 mhz
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 7 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 2010-2025 mhz reference design typical td-scdma performance at 25 c frequency (mhz) 2010 2015 2025 units channel power +27 +27 +27 dbm power gain 13 13 13 db input return loss 8.4 8.6 8.7 db output return loss 6.7 6.6 6.4 db aclr -49 -49 -49 dbc operating current, icc 673 675 679 ma collector efficiency 6.2 6.2 6.1 % output p1db 37.4 37.3 37.1 dbm quiescent current icq 600 ma reference current iref 20 ma vpd +5 v vcc +12 v notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or damage to d1 will occur. 3. do not exceed 13v on vcc or damage to d2 will occur. 4. components shown on the silkscreen but not on the schematic are not used. 5. the edge of c31 is placed at 35mil from edge of ap561. (3.1 o @ 2015 mhz) 6. the edge of l1 next to the edge of c31. 7. the edge of c34 is placed at 195mil from edge of ap561. (17.1 o @ 2015 mhz) 8. the edge of c33 is placed next to the edge of c34. 9. 0 jumpers can be replaced with coppe r trace in target application. 2010-2025 mhz application circuit performance plots td-scdma 3 carrier, par = 10 db @ 0.01% probability, 1.28 mhz bw gain vs frequency t=25c 0 5 10 15 20 2.00 2.01 2.02 2.03 2.04 frequency (ghz) s11, s22 (db) s21 return loss t=25c -25 -20 -15 -10 -5 0 2.00 2.01 2.02 2.03 2.04 frequency (ghz) s11, s22 (db) s11 s22 current vs output average power vs. frequency t=25c 600 625 650 675 700 20 21 22 23 24 25 26 27 28 output power (dbm) collector current (ma) 2010 mhz 2015 mhz 2025 mhz efficiency vs output average power vs. frequency t=25c 0 3 6 9 12 15 20 21 22 23 24 25 26 27 28 29 30 output power (dbm) collector efficiency (%) 2010 mhz 2015 mhz 2025 mhz aclr vs. output average power vs. frequency t=25c -60 -58 -56 -54 -52 -50 -48 -46 -44 -42 -40 20 21 22 23 24 25 26 27 28 output power (dbm) aclr (dbc) 2010 mhz 2015 mhz 2025 mhz
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 8 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 2110-2170 mhz application circuit (ap561-pcb2140) typical w-cdma performance at 25 c frequency (mhz) 2110 2140 2170 units channel power +28 +28 +28 dbm power gain 13.5 13.8 13.1 db input return loss 7.0 12 21 db output return loss 12 8.0 6.1 db aclr -50 -50 -48 dbc operating current, icc 420 430 450 ma collector efficiency 12 12 11.5 % output p1db 37.7 37.1 36.5 dbm quiescent current icq 400 ma reference current iref 15 ma vpd +5 v vcc +12 v notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or damage to d1 will occur. 3. do not exceed 13v on vcc or damage to d2 will occur. 4. components shown on the silkscreen but not on the schematic are not used. 5. the edge of c34 is placed at 65mil from ap561 rfout pin. (6 o @ 2140 mhz) 6. the edge of c32 is placed 40mil from the edge of c34. (3.7 o @ 2140 mhz) 7. the edge of c33 is placed 375mil from the edge of c32. (35 o @ 2140 mhz) 8. the edge of c30 is placed at 100mil from ap561 rfin pin. (9.3 o @ 2140 mhz) 9. the edge of c31 is placed 295mil from the edge of c30. (25.6 o @ 2140 mhz) 10. 0 jumpers can be replaced with coppe r trace in target application. 2110-2170 mhz application circuit performance plots w-cdma 3gpp test model 1+64 dpch, no clipping, par = 10.2 db @ 0.01% probability, 3.84 mhz bw gain vs. frequency t=25c 10 11 12 13 14 15 2.00 2.10 2.20 2.30 frequency (ghz) gain (db) return loss vs. frequency t=25c -35 -30 -25 -20 -15 -10 -5 0 2.00 2.10 2.20 2.30 frequency (ghz) s11, s22 (db) s11 s22 400 450 500 550 600 19 21 23 25 27 29 collector current (ma) output power (dbm) current vs output average power vs. frequency t=25c 2110 mhz 2140 mhz 2170 mhz -70 -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 aclr (dbc) output power (dbm) aclr vs. output average power vs. frequency t=25c 2110 mhz 2140 mhz 2170 mhz 30 31 32 33 34 35 36 37 38 16 17 18 19 20 21 22 23 24 output power (dbm) input power (dbm) output average power vs. input average power t=25c 2110 mhz 2140 mhz 2170 mhz 11 12 13 14 15 16 28 29 30 31 32 33 34 35 36 37 38 gain (db) output power (dbm) gain vs. output average power t=25c 2110 mhz 2140 mhz 2170 mhz
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 9 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 2.3-2.4 ghz reference design typical o-fdma performance at 25 c frequency (ghz) 2.3 2.35 2.4 units channel power +30 +30 +30 dbm power gain 13.8 13.9 13.7 db input return loss 12 16 20 db output return loss 7.3 7.6 6.8 db evm 1.9 1.6 1.6 % operating current, icc 515 490 475 ma collector efficiency 16 16.8 17.8 % output p1db 39.7 39 38 dbm quiescent current icq 300 ma reference current iref 10 ma vpd +5 v vcc +12 v notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or damage to d1 will occur. 3. do not exceed 13v on vcc or damage to d2 will occur. 4. components shown on the silkscreen but not on the schematic are not used. 5. the edge of c25 is placed at 55mil from ap561 rfout pin. (5.6 o @ 2350 mhz) 6. the edge of c26 is placed next to the edge of c25. 7. the edge of c27 is placed 75mil from the edge of c26. (7.7 o @ 2350 mhz) 8. the edge of c24 is placed at 40mil from ap561 rfin pin. (4.1 o @ 2350 mhz) 9. the edge of c23 is placed next to the edge of c24. 10. 0 jumpers can be replaced with coppe r trace in target application. 2.3-2.4 ghz application circuit performance plots 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels. 9.5 db par @ 0.01%, 5 mhz carrier bw gain vs. frequency t=25c 10 11 12 13 14 15 2.25 2.30 2.35 2.40 2.45 frequency (ghz) gain (db) return loss t=25c -30 -25 -20 -15 -10 -5 0 2.25 2.30 2.35 2.40 2.45 frequency (ghz) s11, s22 (db) s11 s22 efficiency vs output average power vs. frequency t=25c 0 5 10 15 20 22 23 24 25 26 27 28 29 30 31 32 output power (dbm) collector efficiency (%) 2.3 ghz 2.35 ghz 2.4 ghz 100 200 300 400 500 600 22 23 24 25 26 27 28 29 30 31 32 collector current (ma) output power (dbm) current vs output average power vs. frequency t=25c 2.3 ghz 2.35 ghz 2.4 ghz 0 1 2 3 4 5 22 24 26 28 30 32 evm (%) output power (dbm) evm vs. output average power vs. frequency t=25c 2.3 ghz 2.35 ghz 2.4 ghz
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 10 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 2.5-2.7 ghz application circuit (ap561-pcb2500) typical o-fdma performance at 25 c frequency (ghz) 2.5 2.6 2.7 units channel power +30 +30 +30 dbm power gain 13.4 13.1 12.2 db input return loss 12 13 16 db output return loss 6.4 6.2 4.3 db evm 2.2 1.5 2.1 % operating current, icc 510 480 490 ma collector efficiency 15.8 17.6 16 % output p1db 39.7 39.0 37.6 dbm quiescent current icq 300 ma reference current iref 10 ma vpd +5 v vcc +12 v notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or damage to d1 will occur. 3. do not exceed 13v on vcc or damage to d2 will occur. 4. components shown on the silkscreen but not on the schematic are not used. 5. the edge of c23 is placed right next to c24. 6. the edge of c24 is placed at 85mil from ap561 rfout pin. (9.6 o @ 2.6 ghz) 7. the edge of c25 is placed at 56mil from ap561 rfin pin. (6.3 o @ 2.6 ghz) 8. the edge of c26 is placed right next to c25. 9. the edge of c27 is placed 55mil from the edge of c26. (6.2 o @ 2.6 ghz) 10. 0 jumpers can be replaced with coppe r trace in target application. 2.5-2.7 ghz application circuit performance plots 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels. 9.5 db par @ 0.01%, 5 mhz carrier bw gain vs. frequency t=25c 9 10 11 12 13 14 2.4 2.5 2.6 2.7 2.8 frequency (ghz) gain (db) return loss vs. frequency t=25c -20 -15 -10 -5 0 2.4 2.5 2.6 2.7 2.8 frequency (ghz) s11, s22 (db) s11 s22 p1db vs. frequency 32 34 36 38 40 42 2.4 2.5 2.6 2.7 2.8 frequency (ghz) p1db(dbm) +25c -40c +85c nf vs. frequency freq = 2.6ghz 4 5 6 7 8 9 2.42.52.62.72.8 frequency (ghz) nf (db) - 40c 25c + 85c power gain vs. output average power vs. vcc freq = 2.6ghz 10 11 12 13 14 24 26 28 30 32 34 36 38 40 output power (dbm) gain (db) +8v +10v +12v +14v power gain vs.frequency vs. vcc t = 25c, icq = 300ma 9 10 11 12 13 14 2.42.52.62.72.8 frequency (ghz) gain (db) +8v +10v +12v +14v
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 11 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier icc vs. output average power vs. vcc freq = 2.6ghz, t = 25oc 200 400 600 800 20 22 24 26 28 30 32 34 output power (dbm) icc (ma) +8v +10v +12v +14v efficiency vs. output average power vs. vcc freq = 2.6ghz , t = 25oc 0 5 10 15 20 25 30 35 40 20 22 24 26 28 30 32 34 output power (dbm) collector efficiency (%) +8v +10v +12v +14v evm vs. output average power vs. vcc freq = 2.6ghz, t = 25oc 0 1 2 3 4 5 20 22 24 26 28 30 32 34 output power (dbm) evm (%) +8v +10v +12v +14v oip3 vs. output power / tone 30 35 40 45 50 55 22 24 26 28 30 32 output power/tone (dbm) oip3 (dbm) 2.5ghz 2.6ghz 2.7ghz imd3 vs. output power / tone -55 -50 -45 -40 -35 -30 20 22 24 26 28 30 output power/tone (dbm) imd3 (dbc) 2.5ghz 2.6ghz 2.7ghz power gain vs temperature 10 11 12 13 14 -50-30-101030507090 temperature (c) gain (db) 2.5 ghz 2.6 ghz 2.7 ghz 0 1 2 3 4 2.5 2.55 2.6 2.65 2.7 evm (%) frequency (ghz) evm vs. frequency pout=30dbm +25c -40c +85c evm vs. output average power 0 1 2 3 4 20 22 24 26 28 30 32 output power (dbm) evm (%) 2.5 ghz 2.6 ghz 2.7 ghz
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 12 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 2.3-2.9 ghz application circuit typical o-fdma performance at 25 c frequency (ghz) 2.3 2.6 2.9 units channel power +30 +30 +30 dbm power gain 11.8 11.5 12.1 db input return loss 17 14 16 db output return loss 3.3 4.0 5.9 db evm 1.9 2.5 2.4 % operating current, icc 630 640 570 ma collector efficiency 13 12.7 14.3 % output p1db 40 39 39 dbm quiescent current icq 300 ma reference current iref 10 ma vpd +5 v vcc +12 v notes: 1. the primary rf microstrip line is 50 . 2. do not exceed 5.5v on vpd or damage to d1 will occur. 3. do not exceed 13v on vcc or damage to d2 will occur. 4. components shown on the silkscreen but not on the schematic are not used. 5. the edge of c26 is placed 10mil from c24. (1.1 o @ 2.6 ghz) 6. the edge of l4 is placed right next to c26. 7. the edge of c23 is placed next to ap561 rfout pin. 8. the edge of c24 is placed right next to c23. 9. the edge of c27 is placed at 50mil from ap561 rfin pin. (5.6 o @ 2.6 ghz) 10. the edge of c28 is placed right next to c27. 11. 0 jumpers can be replaced with coppe r trace in target application. 2.3-2.9 ghz application circuit performance plots 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels. 9.5 db par @ 0.01%, 5 mhz carrier bw gain vs. frequency t=25c 8 9 10 11 12 13 14 2.32.42.52.62.72.82.9 frequency (ghz) gain (db) return loss vs. frequency t=25c -30 -25 -20 -15 -10 -5 0 2.02.22.42.62.83.0 frequency (ghz) s11, s22 (db) s11 s22 current vs. output average power vs. frequency t=25c 300 400 500 600 700 800 20 22 24 26 28 30 32 output power (dbm) collector current (ma) 2.3 ghz 2.6 ghz 2.9 ghz efficiency vs output average power vs frequency t=25c 0 5 10 15 20 20 22 24 26 28 30 32 output power (dbm) collector efficiency (%) 2.3 ghz 2.6 ghz 2.9 ghz evm vs. output average power vs. frequency t=25c 0 1 2 3 4 5 20 22 24 26 28 30 32 output power (dbm) evm (%) 2.3 ghz 2.6 ghz 2.9 ghz
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 13 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier 2.5 ? 2.7 ghz application note: ch anging icq biasing configurations the ap561 can be configured to operate with lower bias current by varying the bias-adjust resistor r2. (table 1) the recommended circuit configurations shown previously in this datasheet have the device operating with a 300 ma as the quiescent current (i cq ). this biasing level represents a tradeoff in terms of evm and efficiency. lowering i cq will improve upon the efficiency of the devi ce, but degrade the evm performance. measured data shown in the plots below represents the ap561-pcb2500 measured and configured for 2.6ghz applications. it is expected that variation of the bias current for other frequency applications will produ ce similar performance results. table 1 : reduced current operation icq (ma) r2 ( ? ) v pd (v) i ref (v) 300 330 5 2.85 280 336 5 2.81 260 240 5 2.78 240 343 5 2.76 220 348 5 2.73 200 351 5 2.71 evm vs. output average power vs. icq freq = 2.6 ghz, t= 25oc 0 1 2 3 4 5 20 22 24 26 28 30 32 34 output power (dbm) evm (%) 200ma 220ma 240ma 260ma 280ma 300ma efficiency vs. output average power vs icq freq = 2.6 ghz, t= 25oc 0 5 10 15 20 25 30 20 22 24 26 28 30 32 34 output power (dbm) efficiency (%) 200ma 220ma 240ma 260ma 280ma 300ma power gain vs. output average power vs. icq freq = 2.6ghz, t= 25oc 9 10 11 12 13 14 20 22 24 26 28 30 32 output power (dbm) gain (db) 200ma 220ma 240ma 260ma 280ma 300ma power gain vs.frequency vs. icq vcc = 12v, t= 25oc 9 10 11 12 13 14 2.4 2.5 2.6 2.7 2.8 frequency (ghz) gain (db) 200ma 220ma 240ma 260ma 280ma 300ma icc vs. output average power vs. icq freq = 2.6 ghz, t= 25oc 200 300 400 500 600 700 20 22 24 26 28 30 32 34 output power (dbm) icc (ma) 200ma 220ma 240ma 260ma 280ma 300ma
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 14 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier parameter measurement information switching speed test test conditions: vcc = +12v at 25 o c output power = +30dbm @ 2.5 ghz rep rate = 1 khz, 50% duty cycle vpd amplitude = +5v r2=200 ohms, c9=12pf (c10, c11 removed for best switching performance) xtal detector voltage =15mv (square law) test result waveforms: cw signal source pulse generator oscilloscope diode detector ap56x evaluation brd attenuator cable length = lx cable length = lx +ve - ve cable length = lx vpd vpd = +5v vpd = +0v rf on vpd = +5v delay = 50ns rf on vpd = +5v delay = 50ns rf off
specifications and information are subject to change without notice triquint semiconductor inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 15 of 15 april 2010 ap561 0.7-2.9 ghz 8w power amplifier mechanical information this package is lead-free/green/rohs-compliant. the plating materi al on the pins is annealed matte tin over copper. it is co mpatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. outline drawing mounting configuration / land pattern product marking the component will be laser marked with a ?AP561-F? product label wi th an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part will be located on the website in the ?application notes? section. functional pin layout pin function 1 vbias 2, 3, 7, 8, 12, 13 n/c 4, 5, 6 rf in 9, 10, 11 rf output / vcc 14 iref backside paddle gnd msl / esd rating esd rating: class 1a value: passes 250v to <500v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020

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